AFP7143S mosfet equivalent, p-channel mosfet.
z -30V/-17A,RDS(ON)=10mΩ@VGS=-10V z -30V/-13A,RDS(ON)=14mΩ@VGS=-4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design
Application
z.
Pin Description ( DFN5X6-8L )
Features
z -30V/-17A,RDS(ON)=10mΩ@VGS=-10V z -30V/-13A,RDS(ON)=14mΩ@VGS=-4.5V z Super hi.
AFP7143S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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