-30V/-10A,RDS(ON)=17mΩ@VGS=-10V -30V/-7A,RDS(ON)=27mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current.

Pin Description ( DFN3.3X3.3-8L ) AFP7127S 30V P-Channel Enhancement Mode MOSFET Features -30V/-10A,RDS(ON)=17mΩ@VGS=-.

AFP7127S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFP7129S

AFP7113WS

AFP7117WS

AFP7143S

AFP7001KAS

AFP7317WS

AFP7401S

AFP7407S

AFP7415WS

AFP7433

AFP7443

AFP7443WS

AFP7463S

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