* ID=-0.5A,RDS(ON)=5Ω@VGS=-10V
* ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and.

Pin Description ( SOT-23 ) AFP7001KAS 60V P-Channel Enhancement Mode MOSFET Features
* ID=-0.5A,RDS(ON)=5Ω@VGS=-10.

AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial .

AFP7113WS

AFP7117WS

AFP7127S

AFP7129S

AFP7143S

AFP7317WS

AFP7401S

AFP7407S

AFP7415WS

AFP7433

AFP7443

AFP7443WS

AFP7463S

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