z 100V/20A,RDS(ON)=20mΩ@VGS=10V z 100V/15A,RDS(ON)=24mΩ@VGS=7V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Synch.

Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=20mΩ@VGS=10V z 100V/15A,RDS(ON)=24mΩ@VGS=7V z Super high den.

AFN6452S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6424S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S

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