30V/5.0A,RDS(ON)=38mΩ@VGS=10.0V 30V/4.0A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Manageme.

Pin Description ( TSOP-6 ) AFN6424S 30V N-Channel Enhancement Mode MOSFET Features 30V/5.0A,RDS(ON)=38mΩ@VGS=10.0V 30V.

AFN6424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6452S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S

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