* ID=12A,RDS(ON)= 8mΩ@VGS=10V
* ID=10A,RDS(ON)= 9mΩ@VGS=6.0V
* ID= 8A,RDS(ON)=10mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)

Pin Description ( SOP-8P ) AFN4874WS 60V N-Channel Enhancement Mode MOSFET Features
* ID=12A,RDS(ON)= 8mΩ@VGS=10V .

AFN4874WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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