40V/12.4A,RDS(ON)= 11mΩ@VGS=10V 40V/10.8A,RDS(ON)= 13mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous .

Pin Description ( SOP-8P ) AFN4840WS 40V N-Channel Enhancement Mode MOSFET Features 40V/12.4A,RDS(ON)= 11mΩ@VGS=10V 40.

AFN4840WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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