60V/8.5A,RDS(ON)=15mΩ@VGS=10V 60V/7.2A,RDS(ON)=17mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load C.

Pin Description ( SOP-8P ) AFN4850WS 60V N-Channel Enhancement Mode MOSFET Features 60V/8.5A,RDS(ON)=15mΩ@VGS=10V 60V/.

AFN4850WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts