40V/16A,RDS(ON)= 48mΩ@VGS=10V 40V/10A,RDS(ON)= 70mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inv.

Pin Description ( TO-252-2L ) AFN4804 40V N-Channel Enhancement Mode MOSFET Features 40V/16A,RDS(ON)= 48mΩ@VGS=10V 40V.

AFN4804, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN4804S

AFN4808W

AFN4822WS

AFN4840WS

AFN4842WS

AFN4848WS

AFN4850WS

AFN4874WS

AFN4896W

AFN4048WS

AFN4056WS

AFN4058WS

AFN4062S

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