AFN4804S mosfet equivalent, 40v n-channel mosfet.
* 40V/16A,RDS(ON)= 48mΩ@VGS=10V
* 40V/10A,RDS(ON)= 70mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* TO-252-2L package design
A.
Pin Description ( TO-252-2L )
AFN4804S
40V N-Channel Enhancement Mode MOSFET
Features
* 40V/16A,RDS(ON)= 48mΩ@VGS=.
AFN4804S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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