60V/3.6A,RDS(ON)=70mΩ@VGS=10V 60V/2.8A,RDS(ON)=78mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ca.

Pin Description ( SOT-23-3L ) AFN2376 60V N-Channel Enhancement Mode MOSFET Features 60V/3.6A,RDS(ON)=70mΩ@VGS=10V 60V.

AFN2376, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

AFN2378S

AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

AFN2316A

AFN2318A

AFN2324A

AFN2324BA

AFN2326BS

AFN2326S

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