AFN1330S mosfet equivalent, n-channel enhancement mode mosfet.
60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.
Pin Description ( SOT-323 )
AFN1330S
60V N-Channel Enhancement Mode MOSFET
Features
60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60.
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