20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low B.

Pin Description ( SOT-523 ) AFN1012E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20.

AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.

AFN1012

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AFN1034E

AFN1055S

AFN1062KS

AFN1072

AFN1072E

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