AFN1024E datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low B.

Application

Pin Description ( SOT-563 ) AFN1024E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20.

Description

AFN1024E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.

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