AFN1026S datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.2A , RDS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.

Application

Pin Description ( SOT-563 ) Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.2A , RDS(ON)=3.0Ω@VGS=4.5V Super high densi.

Description

AFN1026S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.

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