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AFN1304E - N-Channel Enhancement Mode MOSFET

Download the AFN1304E datasheet PDF. This datasheet also covers the AFN1304E-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-323 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1304E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1304E
Manufacturer Alfa-MOS
File Size 593.20 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1304E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1304 N-Channel Enhancement Mode MOSFET
AFN1306 N-Channel Enhancement Mode MOSFET
AFN1330KS N-Channel Enhancement Mode MOSFET
AFN1330S N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1304E 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.
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