AFN1304 Datasheet, Alfa-MOS

20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-r.

Pin Description ( SOT-323 ) AFN1304 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V.