30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-r.

Pin Description ( SOT-323 ) AFN1306 30V N-Channel Enhancement Mode MOSFET Features 30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V.

AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

AFN1304

AFN1304E

AFN1330KS

AFN1330S

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E

AFN1034

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