AFN123WS mosfet equivalent, n-channel enhancement mode mosfet.
100V/0.17A , RDS(ON)=5.8Ω@VGS=10V 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC c.
Pin Description ( SOT-323 )
AFN123WS
100V N-Channel Enhancement Mode MOSFET
Features
100V/0.17A , RDS(ON)=5.8Ω@VGS=10V.
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