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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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InterFET Product Folder Technical Support Order Now IFN201-A-2 IFN201, IFN201A, IFN202 N-Channel JFET Features • InterFET N106A Geometry • Tight

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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a FEATURES Wideband Digital IF Parallel Output Wideband Digital IF Parallel Input Allows Cascade of Chips for Additional Channels Programmable IF and

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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UNISONIC TECHNOLOGIES CO., LTD 7N50-MTQ Preliminary 7.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N50-MTQ is an N-channel mode power MO

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to

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HAT2172H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High densi

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ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 DESCRIPTION This new generation of Trench MOSFETs from

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ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS 20 RDS(on) (Ω) 0.045 @ VGS= 4.5V 0.065 @ VGS= 2.5V ID (A) 4.9 4.1 Descrip

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SWP740-VB www.VBsemi.com SWP740-VB Datasheet /$IBOOFM
657
%4 4VQFS
+VODUJPO Power MOSFET
PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C

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TCA62724FMG www.DataSheet4U.com TOSHIBA CMOS Integrated Circuits Silicon Monolithic TCA62724FMG Three-Channel Constant-Current LED Driver The TCA627

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description The MDV1525 uses advanced M

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N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application

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