RF Transistor Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Mini

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0105-50 50 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION The 0105-50 is a double input matched COMMON EMITTER broadband transist

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2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

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MS1504 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM The MS1504 is a 13.6 V

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF247/D The RF Line NPN Silicon RF Power Transistor The MRF247

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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H G Semiconductors HG RF POWER TRANSISTOR MRF477 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditi

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