RF Transistor Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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0105-50 50 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION The 0105-50 is a double input matched COMMON EMITTER broadband transist

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isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Mini

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com DataShee DataShe

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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2N2222AUB SURFACE MOUNT SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2222AUB is a silicon NPN

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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www.DataSheet4U.com START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA,

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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Features  BVCEO > 60V  IC = 3A High Continuous Current  ICM = 6A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 300mV @ 1A  Complementary

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640A FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitan

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