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IRF3710 - N-Channel MOSFET Transistor

Key Features

  • Drain Current.
  • ID=57A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max).
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effciency switch mode power supplies, Power factor correction and electronic lamp ballasts based on half bridge. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 57 A IDM Drain Current-Single Plused 230 A PD Total Dissipation @TC=25℃ 200 W Tj Max.