Datasheet4U.com

2SC2879 - HG RF POWER TRANSISTOR

Product Overview

HGSemi

📥 Download Datasheet

2SC2879 HG RF POWER TRANSISTOR by HGSemi - Datasheet Preview — Datasheet preview – 2SC2879

Datasheet Details

Part number	2SC2879
Manufacturer	HGSemi
File Size	294.27 KB
Description	HG RF POWER TRANSISTOR
Datasheet	2SC2879 Datasheet
Additional preview pages of the 2SC2879 datasheet.

Product details

Description

Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use)

Features

Specified 12.5V, 28MHz Characteristics.
PO = 100W PEP.
GP = 15.2 Typ. at 100 W/28 MHz.
IMD3 = -24 dBc max. at 100 W(PEP).
Omnigold™ Metalization System.

📁 Similar Datasheet

2SC2879 - TRANSISTOR (Toshiba Semiconductor)
2SC2879 - NPN SILICON RF POWER TRANSISTOR (ASI)
2SC2879A - Silicon NPN epitaxial planar type Transistor (Toshiba)
2SC2873 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC2873 - Silicon NPN Transistor (GME)
2SC2873 - Transistors (AiT Components)
2SC2873 - NPN Transistor (HOTTECH)
2SC2873 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

Other Datasheets by HGSemi

2SC2097 - HG RF POWER TRANSISTOR
2SC2099 - Silicon NPN POWER TRANSISTOR
2SC2101 - Silicon NPN POWER TRANSISTOR
2SC2181 - Silicon NPN POWER TRANSISTOR
2SC2290 - Silicon NPN POWER TRANSISTOR
2SC2312 - Silicon NPN POWER TRANSISTOR

Published: Apr 8, 2019 |