Panasonic Semiconductor 2SK Datasheet | Pinout, Features, Price Comparison & PDF

Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H

Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4

Power F-MOS FETs 2SK2374 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q L

Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q

Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q H

Power F-MOS FETs 2SK2130 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q H

Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q

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Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low

Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q No secondary break

Silicon Junction FETs (Small Signal) 2SK123 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphon

Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 0.65±0.15 +0.2 unit: mm 0.65±0.15

Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q

Power F-MOS FETs 2SK2340 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Qg • High avalanche resista