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K3637 - 2SK3637

Key Features

  • acteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ 85 30 12 1.25 41.6 Max Unit nC nC nC °C/W °C/W Note) Measuring methods are based on.

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Full PDF Text Transcription for K3637 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3637. For precise diagrams, and layout, please refer to the original PDF.

Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4.5) • Low on-resistance,...

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DP/For high-speed switching (10.0) 26.5±0.5 (4.5) • Low on-resistance, low Qg • High avalanche resistance (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter www.DataSheet4U.com Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 ±30 50 200 2 000 100 3 150 −55 to +150 °C °C Unit V 3.3±0.3 A A mJ W 5˚ 1 2 3 5.5±0.3 V 18.6±0.5 (2.0) Solder Dip 1: Gate 2: Drain 3: Source TOP-3E-A1 Package Internal Connection Channel temp

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