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K3192. For precise diagrams, and layout, please refer to the original PDF.
Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • N...
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pability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) 21.0±0.5 φ 3.2±0.1 15.0±0.2 ■ Applications • PDP • Switching mode regulator 16.2±0.5 (3.2) (2.3) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 250 ±30 ±30 ±120 925 100 3 150 −55 to +150 °C °C Unit V V A A mJ W 5.45±0.3 10.9
K3192 Datasheet
