q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
s.
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K3023. For precise diagrams, and layout, please refer to the original PDF.
Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No s...
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capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Unit Drain to Source breakdown voltage VDSS 60 V Gate to Source voltage VGSS ±20 V Drain current DC Pulse ID IDP ±10 A ±20 A Avalanche energy capacity EAS* 5 mJ Allowable power dissipation TC = 25°C Ta = 25°C PD 10 W 1 Channel temperature Storage temperature Tch 150 °C Tstg −
K3023 Datasheet
