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K3047. For precise diagrams, and layout, please refer to the original PDF.
Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: ...
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aranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±2 ±4 15 30 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.
K3047 Datasheet
