Leshan Radio Company L2S Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z We declare that the material of product compliance with RoHS requirements. z S- Pref

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(T

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S-

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DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor des

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LRC LESHAN RADIO COMPANY,LTD. High-Frequency Amplifier Transistor L2SC4083NWT1 z www.DataSheet4U.com 1 BASE 3 COLLECTOR 3 1 2 EMITTER 2 SC-70/SO

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LRC LESHAN RADIO COMPANY,LTD. High-Frequency Amplifier Transistor L2SC4083QWT1 z www.DataSheet4U.com 1 BASE 3 COLLECTOR 3 1 2 EMITTER 2 SC-70/SO

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LESHAN RADIO COMPANY, LTD. L2SC4226T1 3 1 2 www.DataSheet4U.com SC-70/SOT-323 DESCRIPTION The L2SC4226T1 is a low supply voltage transistor desig

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽLow Cob,Cob=2pF(Typ.). L2SC4081QT1G Series S-L2SC4081QT1G Series ƽEpit

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽLow Cob,Cob=2pF(Typ.). L2SC4081QT1G Series S-L2SC4081QT1G Series ƽEpit

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. S- Prefix

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. ƽPNP complement: L2SA812 www.Data

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812Q

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.

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