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L2SD1781KRLT3G - Medium Power Transistor

Download the L2SD1781KRLT3G datasheet PDF. This datasheet also covers the L2SD1781KQLT3G variant, as both devices belong to the same medium power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ. ) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (L2SD1781KQLT3G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number L2SD1781KRLT3G
Manufacturer Leshan Radio Company
File Size 109.83 KB
Description Medium Power Transistor
Datasheet download datasheet L2SD1781KRLT3G Datasheet

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Other Datasheets by Leshan Radio Company

Part Number Description
L2SD1781KRLT1 Medium Power Transistor
L2SD1781KRLT1G Medium Power Transistor
L2SD1781KQLT1 Medium Power Transistor
L2SD1781KQLT1G Medium Power Transistor
L2SD1781KQLT3G Medium Power Transistor

Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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