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L2SC3356LT1G - High-Frequency Amplifier Transistor

Description

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

Features

  • We declare that the material of product compliance with RoHS requirements.
  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
  • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

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Datasheet Details

Part number L2SC3356LT1G
Manufacturer Leshan Radio Company
File Size 421.63 KB
Description High-Frequency Amplifier Transistor
Datasheet download datasheet L2SC3356LT1G Datasheet

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Full PDF Text Transcription

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. ORDERING INFORMATION www.DataSheet4U.com L2SC3356LT1G 3 1 Device L2SC3356LT1G L2SC3356LT3G Marking R24 R24 Shipping 3000/Tape & Reel 10000/Tape & Reel 2 SOT-23 FEATURES • We declare that the material of product compliance with RoHS requirements. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.
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