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L2SC3356LT1 - High-Frequency Amplifier Transistor

Description

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic.

low noise amplifier at VHF, UHF and CATV band.

Features

  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
  • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

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Datasheet Details

Part number L2SC3356LT1
Manufacturer Leshan Radio Company
File Size 166.32 KB
Description High-Frequency Amplifier Transistor
Datasheet download datasheet L2SC3356LT1 Datasheet

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DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic. low noise amplifier at VHF, UHF and CATV band. SOT-23 FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.
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