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L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor

Download the L2SD2114KVLT1G datasheet PDF. This datasheet also covers the L2SD2114KxLT1 variant, as both devices belong to the same epitaxial planar type npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) www. DataSheet4U. com3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K.
  • LT1 3 1 2 SOT.
  • 23 (TO.
  • 236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temper.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (L2SD2114KxLT1_LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number L2SD2114KVLT1G
Manufacturer Leshan Radio Company
File Size 109.27 KB
Description Epitaxial planar type NPN silicon transistor
Datasheet download datasheet L2SD2114KVLT1G Datasheet

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Other Datasheets by Leshan Radio Company

Part Number Description
L2SD2114KVLT1 Epitaxial planar type NPN silicon transistor
L2SD2114KVLT3G NPN silicon transistor
L2SD2114KWLT1 Epitaxial planar type NPN silicon transistor
L2SD2114KWLT1G Epitaxial planar type NPN silicon transistor
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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K*LT1 3 1 2 SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 20 12 0.5 1 0.
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