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L2SD2114KWLT3G - NPN silicon transistor

Download the L2SD2114KWLT3G datasheet PDF. This datasheet also covers the L2SD2114KVLT3G variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other.

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Note: The manufacturer provides a single datasheet file (L2SD2114KVLT3G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number L2SD2114KWLT3G
Manufacturer Leshan Radio Company
File Size 99.50 KB
Description NPN silicon transistor
Datasheet download datasheet L2SD2114KWLT3G Datasheet

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Other Datasheets by Leshan Radio Company

Part Number Description
L2SD2114KWLT1 Epitaxial planar type NPN silicon transistor
L2SD2114KWLT1G Epitaxial planar type NPN silicon transistor
L2SD2114KVLT1 Epitaxial planar type NPN silicon transistor
L2SD2114KVLT1G Epitaxial planar type NPN silicon transistor
L2SD2114KVLT3G NPN silicon transistor

Full PDF Text Transcription

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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