.
Fairchild Semiconductor
FDD5612 - 60V N-Channel PowerTrench MOSFET
· 13 faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easier to drive, even...
Fairchild Semiconductor
FDD6670S - 30V N-Channel MOSFET
· 8 • 64 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (17nC typical) • Hig...
Fairchild Semiconductor
FDD3670 - 100V N-Channel PowerTrench MOSFET
· 7 • 34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V • Low gate charge (57 nC typical) • Fast switching speed • High performan...
Fairchild Semiconductor
FDD6630A - N-Channel PowerTrench MOSFET
· 7 21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.050 Ω @ VGS = 4.5 V. Low gate charge. Fast switching speed. High performance trench tec...
Fairchild Semiconductor
FDD3706 - 20V N-Channel MOSFET
· 6 • 50 A, 20 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 16 mΩ @ VGS = 2.5 V • Low gate charge (16 nC) • Fast Switching •...
Fairchild Semiconductor
FDD6030BL - N-Channel MOSFET
· 6 • 42 A, 30 V RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 22 mΩ @ VGS = 4.5 V • Low gate charge (22 nC typical) • Fast switching • High performance tre...
Fairchild Semiconductor
FDD6696 - 30V N-Channel PowerTrench MOSFET
· 6 • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V • Low gate charge (17nC typical) • Fast switching • High performance tren...
Fairchild Semiconductor
FDD3672_F085 - N-Channel UltraFET Trench MOSFET
· 6 Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A Typ Qg(10) = 24nC at VGS = 10V Low Miller Charge Low Qrr Body Diode Optimized efficiency at high f...
Fairchild Semiconductor
FDD6030L - N-Channel MOSFET
· 5 • 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching Speed • High performance trench tech...
Fairchild Semiconductor
FDD6632 - N-Channel MOSFET
· 5 low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC conver...
Fairchild Semiconductor
FDD6680 - 30V N-Channel PowerTrench MOSFET
· 5 • 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching Speed • High performance trench technology...
Fairchild Semiconductor
FDD6680A - N-Channel/ Logic Level/ PowerTrench MOSFET
· 5 • • • 56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V. Low gate charge ( 23nC typical ). Fast switching speed. High perfo...
Fairchild Semiconductor
FDD6680S - 30V N-Channel PowerTrench SyncFET
· 5 • 55 A, 30 V RDS(ON) = 11 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (17nC typical) • Hig...
Fairchild Semiconductor
FDD6692 - 30V N-Channel PowerTrench MOSFET
· 5 • 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V • Low gate charge (18 nC typical) • Fast switching Applications • DC/DC c...
Fairchild Semiconductor
FDD4243 - P-Channel MOSFET
· 5 General Description Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A High performance trench technolog...
Fairchild Semiconductor
FDD6778A - N-Channel MOSFET
· 5 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronou...
Fairchild Semiconductor
FDD1600N10ALZD - N-Channel MOSFET
· 5 • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A • RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A • Low Gate Charge (Typ. 2.78 nC) • Low Crss (Ty...
Fairchild Semiconductor
FDD6606 - 30V N-Channel PowerTrench MOSFET
· 5 • 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching • High performance trench technology for...
Fairchild Semiconductor
FDD770N15A - MOSFET
· 4 • RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(...
Fairchild Semiconductor
FDD16AN08A0 - N-Channel MOSFET
· 4 • RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 31 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Si...