FDD8424H_F085A - Dual N & P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDD8424H_F085A
Manufacturer	Fairchild Semiconductor
File Size	490.14 KB
Description	Dual N & P-Channel PowerTrench MOSFET
Datasheet	FDD8424H_F085A-FairchildSemiconductor.pdf

FDD8424H_F085A Product details

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Inverter H-Bridge D1 D2 D1/D2 G2 S2 G1 S1 G1 S1 Dual DPAK 4L N-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted G2 S2 P-Channel Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Sourc

Features

Q1: N-Channel.
Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A.
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel.
Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A.
Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A.
Fast switching speed.
Qualified to AEC Q101.
RoHS Compliant General.

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Published: Apr 6, 2018 |