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WFP50N06 Silicon N-Channel MOSFET

WFP50N06 Description

.
This Power MOSFET is produced using Winsemi's trench Layout -based process .

WFP50N06 Features

* RDS(on)(Max 22mΩ)@VGS=10V
* Ultra-low Gate Charge(Typical 31nC)
* Fast Switching Capability
* 100%Avalanche Tested

WFP50N06 Applications

* in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous D

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Datasheet Details

Part number
WFP50N06
Manufacturer
Winsemi
File Size
590.12 KB
Datasheet
WFP50N06-Winsemi.pdf
Description
Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET Winsemi
Winsemi WFP50N06-like datasheet