WFP10N60 - N-Channel MOSFET

Features

• Low Intrinsic Capacitances .
• Excellent Switching Characteristics .
• Extended Safe Operating Area .
• Unrivalled Gate Charge :Qg= 33nC (Typ. ).
• BVDSS=600V,ID=10A.
• RDS(on) :0.73 Ω (Max) @VG=10V.
• 100% Avalanche Tested   GDS D !.
• ◀▲ G!.
• !    S   TO‐220    G‐Gate,D‐Drain,S‐Sourse  Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Dra.