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Features
� 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP5N60B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
WFP5N60B Datasheet
