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WFP13N50 Silicon N-Channel MOSFET

WFP13N50 Description

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This Power MOSFET is produced using Winsemi’s trench layout-based process.

WFP13N50 Features

* 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
* Ultra-low Gate charge(Typical 43nC)
* Fast Switching Capability
* 100%Avalanche Tested

WFP13N50 Applications

* in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Dra

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Datasheet Details

Part number
WFP13N50
Manufacturer
Winsemi
File Size
562.93 KB
Datasheet
WFP13N50-Winsemi.pdf
Description
Silicon N-Channel MOSFET

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