PE8590 - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PE8590 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

VDS=85V; ID=92A@ VGS=10V; RDS(ON).

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PE8590 n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE8590
Manufacturer	semi one
File Size	1.71 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8590 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Trench Power MOSFET General Description The PE8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=85V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply PE8590 Schematic Diagram To-220 Top View Table 1.