Datasheet4U Logo Datasheet4U.com

PE8203 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8203 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number PE8203
Manufacturer semi one
File Size 826.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8203 Datasheet

Other Datasheets by semi one

Part Number Description
PE8203A N-Channel Enhancement Mode Power MOSFET
PE8200 N-Channel Enhancement Mode Power MOSFET
PE8205 N-Channel Enhancement Mode Power MOSFET
PE8205A N-Channel Enhancement Mode Power MOSFET
PE80H11 N-Channel Enhancement Mode Power MOSFET
PE80H13 N-Channel Enhancement Mode Power MOSFET
PE8590 N-Channel Enhancement Mode Power MOSFET
PE8804 N-Channel Enhancement Mode Power MOSFET
PE8806 N-Channel Enhancement Mode Power MOSFET
PE8810 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE8203 N-Channel Enhancement Mode Power MOSFET Description The PE8203 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.