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PE8806 - N-Channel Enhancement Mode Power MOSFET

Description

The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8806
Manufacturer semi one
File Size 883.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8806 Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.
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