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PE8804 - N-Channel Enhancement Mode Power MOSFET

Description

The PE8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =8A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 19mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number PE8804
Manufacturer semi one
File Size 746.37 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8804 Datasheet

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Full PDF Text Transcription

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PE8804 N-Channel Enhancement Mode Power MOSFET Description The PE8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =8A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 19mΩ @ VGS=2.
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