PMPB19XP
description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices
- Hard disk and puting power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12
- 12 V
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1]
- - -10.3 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C resistance
- 19 22.5 mΩ
[1]...
