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BUK9606-55B - N-channel TrenchMOS FET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription for BUK9606-55B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9606-55B. For precise diagrams, and layout, please refer to the original PDF.

BUK9606-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transisto...

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General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.

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