Full PDF Text Transcription for BUK9606-75B (Reference)
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BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 — 20 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode...
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profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick r
BUK9606-75B Datasheet
