Full PDF Text Transcription for BUK9608-55A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK9608-55A. For precise diagrams, and layout, please refer to the original PDF.
BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement ...
View more extracted text
uct profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 1.4 Quick reference dat
BUK9608-55A Datasheet
