Download the BUK9606-55A datasheet PDF.
This datasheet also covers the BUK9E06-55A variant, as both devices belong to the same trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).
2.
Key Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.
Note: The manufacturer provides a single datasheet file (BUK9E06-55A_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK9606-55A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK9606-55A. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-ef...
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ly 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4.
BUK9606-55A Datasheet
