Download the BUK9606-40B datasheet PDF.
This datasheet also covers the BUK9506-40B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability: BUK9506-40B in SOT78 (TO-220AB) BUK9606-40B in SOT404 (D2-PAK).
Key Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.
Note: The manufacturer provides a single datasheet file (BUK9506-40B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK9606-40B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK9606-40B. For precise diagrams, and layout, please refer to the original PDF.
BUK95/9606-40B TrenchMOS™ logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in ...
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escription N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9506-40B in SOT78 (TO-220AB) BUK9606-40B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 494 mJ s ID ≤ 75 A s RDSon = 5.7 mΩ (typ) s Ptot ≤ 203 W. 2.
BUK9606-40B Datasheet
